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Panasonic 2SA2174G User Manual

Silicon pnp epitaxial planar type, Transistors

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Transistors

Publication date: May 2007

SJC00386AED

1

This product complies with the RoHS Directive (EU 2002/95/EC).

2SA2174G

Silicon PNP epitaxial planar type

For general amplification
Complementary to 2SC6054G

Features

High forward current transfer ratio h

FE

SS-Mini type package, allowing downsizing of the equipment and automatic

insertion through the tape packing.

Absolute Maximum Ratings T

a

= 25°C

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

V

CBO

-

60

V

Collector-emitter voltage (Base open)

V

CEO

-

50

V

Emitter-base voltage (Collector open)

V

EBO

-

7

V

Collector current

I

C

-

100

mA

Peak collector current

I

CP

-

200

mA

Collector power dissipation

P

C

125

mW

Junction temperature

T

j

125

°

C

Storage temperature

T

stg

-

55 to +125

°

C

Electrical Characteristics T

a

= 25°C±3°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

V

CBO

I

C

= -10 mA, I

E

= 0

-

60

V

Collector-emitter voltage (Base open)

V

CEO

I

C

= -2 mA, I

B

= 0

-

50

V

Emitter-base voltage (Collector open)

V

EBO

I

E

= -10 mA, I

C

= 0

-

7

V

Collector-base cutoff current (Emitter open)

I

CBO

V

CB

= -20 V, I

E

= 0

-

0.1

m

A

Collector-emitter cutoff current (Base open)

I

CEO

V

CE

= -10 V, I

B

= 0

-

100

m

A

Forward current transfer ratio

h

FE

V

CE

= -10 V, I

C

= -2 mA

160

460

Collector-emitter saturation voltage

V

CE(sat)

I

C

= -100 mA, I

B

= -10 mA

-

0.2

-

0.5

V

Transition frequency

f

T

V

CB

= -10 V, I

E

= 1 mA, f = 200 MHz

80

MHz

Collector output capacitance
(Common base, input open circuited)

C

ob

V

CB

= -10 V, I

E

= 0, f = 1 MHz

2.2

pF

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

Package

Code

SSMini3-F3

Marking Symbol: 7L

Pin Name

1. Base
2. Emitter
3. Collector