Panasonic 2SC3312 User Manual
Silicon npn epitaxial planar type, Transistors, Absolute maximum ratings t
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Transistors
1
Publication date: March 2003
SJC00128BED
2SC3312
Silicon NPN epitaxial planar type
For low-frequency and low-noise amplification
Complementary to 2SA1310
■ Features
• Optimum for high-density mounting
• Allowing supply with the radial taping
• Low noise voltage NV
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
60
V
Collector-emitter voltage (Base open)
V
CEO
55
V
Emitter-base voltage (Collector open)
V
EBO
7
V
Collector current
I
C
100
mA
Peak collector current
I
CP
200
mA
Collector power dissipation
P
C
300
mW
Junction temperature
T
j
150
°C
Storage temperature
T
stg
−55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
= 10 µA, I
E
= 0
60
V
Collector-emitter voltage (Base open)
V
CEO
I
C
= 2 mA, I
B
= 0
55
V
Emitter-base voltage (Collector open)
V
EBO
I
E
= 10 µA, I
C
= 0
7
V
Base-emitter voltage
V
BE
V
CE
= 1 V, I
C
= 30 mA
1
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= 20 V, I
E
= 0
0.1
µA
Collector-emitter cutoff current (Base open)
I
CEO
V
CE
= 20 V, I
B
= 0
1
µA
Forward current transfer ratio
*
h
FE
V
CE
= 5 V, I
C
= 2 mA
180
700
Collector-emitter saturation voltage
V
CE(sat)
I
C
= 100 mA, I
B
= 10 mA
1
V
Transition frequency
f
T
V
CB
= 5 V, I
E
= −2 mA, f = 200 MHz
200
MHz
Noise voltage
NV
V
CE
= 10 V, I
C
= 1 mA, G
V
= 80 dB
150
mV
R
g
= 100 kΩ, Function = FLAT
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
S
T
h
FE
180 to 360
260 to 520
360 to 700
4.0
±0.2
0.75 max.
2.0
±0.2
0.45
(2.5) (2.5)
0.7
±0.1
2
3
1
+0.20
–0.10
0.45
+0.20
–0.10
7.6
3.0
±
0.2
(0.8)
(0.8)
15.6
±
0.5
1: Emitter
2: Collector
3: Base
NS-B1 Package
This product complies with the RoHS Directive (EU 2002/95/EC).