Panasonic 2SA1532G User Manual
Silicon pnp epitaxial planar type, Transistors, Absolute maximum ratings t
![background image](/manuals/188291/1/background.png)
Transistors
1
Publication date: July 2007
SJC00346BED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SA1532G
Silicon PNP epitaxial planar type
For low-frequency amplification
Complementary to 2SC3930G
■ Features
• High transition frequency f
T
• S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
−30
V
Collector-emitter voltage (Base open)
V
CEO
−20
V
Emitter-base voltage (Collector open)
V
EBO
−5
V
Collector current
I
C
−30
mA
Collector power dissipation
P
C
150
mW
Junction temperature
T
j
150
°C
Storage temperature
T
stg
−55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Base-emitter saturation voltage
V
BE
V
CE
= −10 µA, I
C
= −1 mA
− 0.7
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= −10 V, I
E
= 0
− 0.1
µA
Collector-emitter cutoff current (Base open)
I
CEO
V
CE
= −20 V, I
B
= 0
−100
µA
Emitter-base cutoff current (Collector open)
I
EBO
V
EB
= −5 V, I
C
= 0
−10
µA
Forward current transfer ratio
*
h
FE
V
CE
= −10 V, I
C
= 1 mA
70
220
Collector-emitter saturation voltage
V
CE(sat)
I
C
= −10 mA, I
B
= −1 mA
− 0.1
V
Transition frequency
f
T
V
CB
= −10 V, I
E
= 1 mA, f = 200 MHz
150
300
MHz
Noise figure
NF
V
CB
= −10 V, I
E
= 1 mA, f = 5 MHz
2.8
4.0
dB
Reverse transfer impedance
Z
rb
V
CB
= −10 V, I
E
= 1 mA, f = 2 MHz
22
60
Ω
Common-emitter reverse transfer capacitance
C
re
V
CB
= −10 V, I
E
= 1 mA, f = 10.7 MHz
1.2
2.0
pF
■ Electrical Characteristics T
a
= 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
B
C
h
FE
70 to 140
110 to 220
■ Package
• Code
SMini3-F2
• Marking Symbol: E
• Pin Name
1. Base
2. Emitter
3. Collector