Panasonic 2SC3311A - Manual

Transistors
1 Publication date: March 2003 SJC00127BED
2SC3311A
Silicon NPN epitaxial planar type
For low-frequency amplification
Complementary to 2SA1309A
■ Features
• Optimum for high-density mounting
• Allowing supply with the radial taping
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
60 V
Collector-emitter voltage (Base open) V
CEO
50 V
Emitter-base voltage (Collector open) V
EBO
7 V
Collector current I
C
100 mA
Peak collector current I
CP
200 mA
Collector power dissipation P
C
300 mW
Junction temperature T
j
150
°C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= 10 µA, I
E
= 0 60 V
Collector-emitter voltage (Base open) V
CEO
I
C
= 2 mA, I
B
= 0 50 V
Emitter-base voltage (Collector open) V
EBO
I
E
= 10 µA, I
C
= 0
7 V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= 10 V, I
E
= 0
0.1
µA
Collector-emitter cutoff current (Base open) I
CEO
V
CE
= 10 V, I
B
= 0
1
µA
Forward current transfer ratio * h
FE
V
CE
= 10 V, I
C
= 2 mA
160 460

Collector-emitter saturation voltage V
CE(sat)
I
C
= 100 mA, I
B
= 10 mA
0.1 0.3 V
Transition frequency f
T
V
CB
= 10 V, I
E
= −2 mA, f = 200 MHz
150 MHz
Collector output capacitance C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz
3.5 pF
(Common base, input open circuited)
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank Q R S No-rank
h
FE
160 to 260 210 to 340 290 to 460 160 to 460
Product of no-rank is not classified and have no indication for rank.
4.0 ±0.2
0.75 max.
2.0 ±0.2
0.45
(2.5) (2.5)
0.7 ±0.1
2 3 1
+0.20
–0.10
0.45 +0.20
–0.10
7.6
3.0
± 0.2
(0.8)
(0.8)
15.6
± 0.5
1: Emitter
2: Collector
3: Base
NS-B1 Package
This product complies with the RoHS Directive (EU 2002/95/EC).