Vishay VS-GT50TP60N User Manual
Vs-gt50tp60n, Vishay semiconductors, Preliminary
Preliminary
VS-GT50TP60N
www.vishay.com
Vishay Semiconductors
Revision: 22-Dec-11
1
Document Number: 94666
For technical questions within your region:
,
,
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Half Bridge IGBT Power Module, 600 V, 50 A
FEATURES
• Low V
CE(sat)
trench IGBT technology
• 5 μs short circuit capability
• V
CE(sat)
with positive temperature coefficient
• Maximum junction temperature 175 °C
• Low inductance case
• Fast and soft reverse recovery antiparallel FWD
• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology
• Compliant to RoHS Directive 2002/95/EC
TYPICAL APPLICATIONS
• UPS (Uninterruptable Power Supply)
• Electronic welders
• Switching mode power supplies
DESCRIPTION
Vishay’s IGBT power module provides ultra low conduction
loss as well as short circuit ruggedness. It is designed for
applications such as UPS and SMPS.
Note
(1)
Repetitive rating: Pulse width limited by maximum junction temperature.
PRODUCT SUMMARY
V
CES
600 V
I
C
at T
C
= 80 °C
50 A
V
CE(sat)
(typical)
at I
C
= 50 A, 25 °C
1.65 V
New INT-A-PAK
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
UNITS
Collector to emitter voltage
V
CES
600
V
Gate to emitter voltage
V
GES
± 20
Collector current
I
C
T
C
= 25 °C
85
A
T
C
= 80 °C
50
Pulsed collector current
I
CM
(1)
t
p
= 1 ms
100
Diode continuous forward current
I
F
T
C
= 80 °C
50
Diode maximum forward current
I
FM
(1)
t
p
= 1 ms
100
Maximum power dissipation
P
D
T
J
= 175 °C
208
W
RMS isolation voltage
V
ISOL
f = 50 Hz, t = 1 min
4000
V