Diodes DMN6070SSD - Manual (Page 2)

DMN6070SSD
Document number: DS36342 Rev. 2 - 2
2 of 6
www.diodes.com
September 2013
© Diodes Incorporated
DMN6070SSD
NEW PROD
UC
T
ADVAN
CE I
N
F
O
RM
ATI
O
N
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
60 V
Gate-Source Voltage V
GSS
±20 V
Continuous Drain Current (Note 6) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
3.3
2.6
A
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
4.1
3.4
A
Maximum Continuous Body Diode Forward Current (Note 5) I
S
2.0 A
Pulsed Drain Current (10μs pulse, duty cycle = 1%) I
DM
12 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) P
D
1.2 W
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
R
JA
104
°C/W
t<10s 61
Total Power Dissipation (Note 6) P
D
1.5 W
Thermal Resistance, Junction to Ambient (Note 6)
Steady State
R
JA
83
°C/W t<10s 50
Thermal Resistance, Junction to Case R
JC
14.5
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
60   V I
D
= 250μA, V
GS
= 0V
Zero Gate Voltage Drain Current I
DSS
  1 μA V
DS
= 60V, V
GS
= 0V
Gate-Source Leakage I
GSS
  100 nA V
GS
= 16V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
1.0  3.0 V I
D
= 250μA, V
DS
= V
GS
Static Drain-Source On-Resistance R
DS (ON)

68 80
mΩ
V
GS
= 10V, I
D
= 12A
70 100 V
GS
= 4.5V, I
D
= 6A
Diode Forward Voltage V
SD
 0.75 1.1 V I
S
= 12A, V
GS
= 0V
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
 588 
pF
V
DS
= 30V, V
GS
= 0V
f= 1MHz
Output Capacitance C
oss
 26.5 
Reverse Transfer Capacitance C
rss
 20 
 R
g
 1.5  Ω Vgs= 0V, Vds= 0V, f=1MHz,
Total Gate Charge (V
GS
= 4.5V) Q
g
 5.6 
nC V
DS
= 30V, I
D
= 3A
Total Gate Charge (V
GS
= 10V) Q
g
 12.3 
Gate-Source Charge Q
gs
 1.7 
Gate-Drain Charge Q
gd
 1.9 
Turn-On Delay Time t
D(on)
 3.5 
nS
V
DD
= 30V, V
GS
= 10V
R
L
 50Ω, R
G
 20Ω
Turn-On Rise Time t
r
 4.1 
Turn-Off Delay Time t
D(off)
 35 
Turn-Off Fall Time t
f
 11 
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.