Diodes DSS4160T - Manual (Page 4)

DSS4160T
Document number: DS35531 Rev. 2 - 2
4 of 7
www.diodes.com
May 2014
© Diodes Incorporated
DSS4160T
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Conditions
Collector-Base Breakdown Voltage BV
CBO
80 ⎯ ⎯ V I
C
= 100μA
Collector-Emitter Breakdown Voltage (Note 9) BV
CEO
60 ⎯ ⎯ V I
C
= 10mA
Emitter-Base Breakdown Voltage BV
EBO
5 ⎯ ⎯ V I
E
= 100μA
Collector-Base Cutoff Current I
CBO
⎯ ⎯ 100 nA V
CB
= 60V, I
E
= 0
⎯ ⎯ 50 μA V
CB
= 60V, I
E
= 0, T
A
= +150°C
Collector Cutoff Current I
CES
⎯ ⎯ 100 nA V
EB
= 60V, I
BE
= 0
Emitter-Base Cutoff Current I
EBO
⎯ ⎯ 100 nA V
EB
= 5V, I
C
= 0
DC Current Gain (Note 9) h
FE
250 ⎯ ⎯
⎯
V
CE
= 5V, I
C
= 1mA
200 ⎯ ⎯ V
CE
= 5V, I
C
= 500mA
100 ⎯ ⎯ V
CE
= 5V, I
C
= 1A
Collector-Emitter Saturation Voltage (Note 9) V
CE(sat)
⎯ ⎯ 115
mV
I
C
= 100mA, I
B
= 1mA
⎯ ⎯ 150 I
C
= 500mA, I
B
= 50mA
⎯ ⎯ 280 I
C
= 1A, I
B
= 100mA
Equivalent On-Resistance R
CE(sat)
⎯ ⎯ 280 mΩ I
E
= 1A, I
B
= 100mA
Base-Emitter Saturation Voltage V
BE(sat)
⎯ ⎯ 1.1 V I
C
= 1A, I
B
= 50mA
Base-Emitter Turn-on Voltage V
BE(on)
⎯ ⎯ 0.9 V V
CE
= 5V, I
C
= 1A
Transition Frequency f
T
150 ⎯ ⎯ MHz
V
CE
= 10V, I
C
= 50mA,
f = 100MHz
Output Capacitance C
obo
⎯ ⎯ 10 pF V
CB
= 10V, f = 1MHz
Turn-On Time t
on
⎯ 63 ⎯ ns
V
CC
= 10V, I
C
= 0.5A,
I
B1
= I
B2
= 25mA
Delay Time t
d
⎯ 33 ⎯ ns
Rise Time t
r
⎯ 30 ⎯ ns
Turn-Off Time t
off
⎯ 420 ⎯ ns
Storage Time t
s
⎯ 380 ⎯ ns
Fall Time t
f
⎯ 40 ⎯ ns
Note: 9. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%.