Bss138 – Diodes BSS138 User Manual
Page 3
BSS138
Document number: DS30144 Rev. 20 - 2
3 of 5
November 2013
© Diodes Incorporated
BSS138
0.65
T , JUNCTION TEMPERATURE (°C)
Fig. 3 Drain-Source On-Resistance vs. Junction Temperature
j
0.85
1.05
1.25
1.65
1.45
1.85
2.05
2.25
2.45
-55
-5
45
95
145
V = 10V
GS
V = 4.5V
GS
I = 0.5A
D
I = 0.075A
D
R
, NORM
A
LIZ
ED
DR
AIN-
SOUR
CE
ON-RE
S
IS
TA
NC
E
(
)
DS
(O
N
)
Ω
V
,
GA
T
E
T
HRES
H
OL
D V
O
LT
AGE
(V
)
GS
(t
h
)
T , JUNCTION TEMPERATURE (°C)
Fig. 4 Gate Threshold Variation vs. Ambient Temperature
j
0
0.4
0.8
1.2
1.6
2.0
2.4
-50
-25
0
25
50
75
100
125 150
I = 1mA
D
I = 250µA
D
0
I , DRAIN-CURRENT (A)
Fig. 5 Drain-Source On-Resistance vs. Drain-Current
D
1
2
3
4
5
6
7
8
0
0.02 0.04
0.06 0.08
0.16
0.14
0.12
0.1
150 C
°
25 C
°
V = 2.5V
GS
-55 C
°
R
, D
R
AI
N
-S
O
U
R
C
E
O
N-
R
ESI
S
TAN
C
E (
)
DS
(O
N)
Ω
0
I , DRAIN-CURRENT (A)
Fig. 6 Drain-Source On-Resistance vs. Drain-Current
D
1
2
3
5
4
6
7
8
9
0
0.05
0.1
0.2
0.15
0.25
150 C
°
-55 C
°
25 C
°
V
= 2.75V
GS
R
, D
R
AI
N
-S
O
U
R
C
E
O
N-
R
ESI
S
TAN
C
E (
)
DS(
O
N
)
Ω
0
1
2
3
4
5
6
0
0.1
0.2
0.3
0.4
0.5
I , DRAIN-CURRENT (A)
Fig. 7 Drain-Source On-Resistance vs. Drain-Current
D
150 C
°
-55 C
°
25 C
°
V
= 4.5V
GS
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-R
ESI
S
TA
N
C
E (
)
DS
(O
N
)
Ω
0
0.5
1
1.5
2
2.5
3
3.5
0
0.1
0.2
0.3
0.4
0.5
I , DRAIN-CURRENT (A)
Fig. 8 Drain-Source On Resistance vs. Drain-Current
D
150 C
°
-55 C
°
25 C
°
V
= 10V
GS
R
, D
R
AI
N-
S
O
U
R
C
E
O
N-
R
ESI
S
TAN
C
E (
)
DS
(O
N)
Ω