Electrical characteristics, Zxm64p03x, A product line of diodes incorporated – Diodes ZXM64P03X User Manual
Page 3
ZXM64P03X
Document Number DS33487 Rev. 2 - 2
3 of 7
October 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXM64P03X
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
-30
⎯
⎯
V
I
D
= -250
μA, V
GS
= 0V
Zero Gate Voltage Drain Current
I
DSS
⎯
⎯
-1
μA
V
DS
= -30V, V
GS
= 0V
Gate-Source Leakage
I
GSS
⎯
⎯
±100 nA
V
GS
=
±20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
-1.0
⎯
⎯
V
I
D
= -250
μA, V
DS
= V
GS
Static Drain-Source On-Resistance (Note 9)
R
DS (ON)
⎯
⎯
75
m
Ω
V
GS
= -10V, I
D
= -2.4A
100
V
GS
= -4.5V, I
D
= -1.2A
Forward Transconductance (Notes 9 and 11)
g
fs
2.3
⎯
⎯
S
V
DS
= -10V, I
D
= -1.2A
Diode Forward Voltage (Note 9)
V
SD
⎯
⎯
-0.95 V
T
J
= +25°C, I
S
= -2.4A, V
GS
= 0V
Reverse Recovery Time (Note 11)
t
rr
⎯
30.2
⎯
ns
T
J
= +25°C, I
F
= -2.4A,
di/dt = 100A/
μs
Reverse Recovery Charge (Note 11)
Q
rr
⎯
27.8
⎯
nC
DYNAMIC CHARACTERISTICS (Note 11)
Input Capacitance
C
iss
⎯
825
⎯
pF
V
DS
= -25V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
⎯
250
⎯
Reverse Transfer Capacitance
C
rss
⎯
80
⎯
Turn-On Delay Time (Note 10)
t
d(on)
⎯
4.4
⎯
ns
V
DD
= -15V, I
D
= -2.4A,
R
G
= 6.2
Ω, R
D
= 6.2
Ω
(Refer to test circuit)
Turn-On Rise Time (Note 10)
t
r
⎯
6.2
⎯
Turn-Off Delay Time (Note 10)
t
d(off)
⎯
40
⎯
Turn-Off Fall Time (Note 10)
t
f
⎯
29.2
⎯
Total Gate Charge (Note 10)
Q
g
⎯
⎯
46
nC
V
DS
= -24V, V
GS
= -10V,
I
D
= -2.4A
(Refer to test circuit)
Gate-Source Charge (Note 10)
Q
gs
⎯
⎯
9
Gate-Drain Charge (Note 10)
Q
gd
⎯
⎯
11.5
Notes:
9. Measured under pulsed conditions. Pulse width = 300
μs. Duty cycle ≤ 2%.
10. Switching characteristics are independent of operating junction temperature.
11. For design aid only, not subject to production testing.