Zxtn649f, Electrical characteristics, A product line of diodes incorporated – Diodes ZXTN649F User Manual
Page 4
ZXTN649F
Document number: DS31900 Rev. 3 - 2
4 of 7
January 2013
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTN649F
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
Collector-Base Breakdown Voltage
BV
CBO
35 110 -
V I
C
= 100µA
Collector-Emitter Breakdown Voltage (Note 8)
BV
CEO
25 35 - V
I
C
= 10mA
Emitter-Base Breakdown Voltage
BV
EBO
7 8.1 - V
I
E
= 100µA
Collector Cut-off Current
I
CBO
- <1 50
0.5
nA
µA
V
CB
= 28V
V
CB
= 28V, T
A
= +100°C
Emitter Cut-off Current
I
EBO
- <1 50 nA
V
EB
= 5.6V
Static Forward Current Transfer Ratio (Note 8)
h
FE
200
175
155
50
320
280
250
85
500
-
-
-
-
I
C
= 100mA, V
CE
= 2V
I
C
= 1A, V
CE
= 2V
I
C
= 2A, V
CE
= 2V
I
C
= 6A, V
CE
= 2V
Collector-Emitter Saturation Voltage (Note 8)
V
CE(sat)
-
-
70
200
120
300
mV
I
C
= 1A, I
B
= 100mA
I
C
= 3A, I
B
= 300mA
Base-Emitter Saturation Voltage (Note 8)
V
BE(sat)
- 900
1000 mV
I
C
= 1A, I
B
= 100mA
Base-Emitter Saturation Voltage (Note 8)
V
BE(on)
- 780
850 mV
I
C
= 1A, V
CE
= 2V
Notes:
8. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%