Vishay semiconductors – C&H Technology VS-UFB130FA20 User Manual
Page 5
VS-UFB130FA20
www.vishay.com
Vishay Semiconductors
Revision: 26-Oct-11
4
Document Number: 93606
For technical questions within your region:
,
,
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
Note
(1)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
I
F(AV)
- Average Forward Current (A)
DC
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
200
A
llo
w
a
b
le
C
a
s
e
T
e
m
p
er
at
u
re (
°
C)
Square Wave (D = 0.5)
Rated V
R
applied
I
F(AV)
- Average Forward Current (A)
Average Power Loss (W)
0
0
10 20 30 40 50 60 70 80 90 100 110 120
25
50
75
100
125
150
RMS Limit
D = 0.05
D = 0.10
D = 0.20
D = 0.50
D = 0.33
DC
t
rr
(ns)
0
10
20
30
40
50
60
70
80
T
J
= 125 °C
T
J
= 25 °C
I
F
= 50 A
V
rr
= 200 V
100
1000
dI
F
/dt (A/μs)
Q
rr
(nC)
0
100
200
300
400
500
600
700
800
0
0
0
1
0
0
1
T
J
= 125 °C
T
J
= 25 °C
I
F
= 50 A
V
rr
= 200 V
dI
F
/dt (A/μs)